17m 15sLänge

Created by Chintan Hossain for EE 216: Principles and Models of Semiconductor Devices (Winter 2012-13 quarter) at Stanford University. Table of Contents: 00:24 The Key Device: Floating Gate Transistor 00:56 SLC vs. MLC 02:03 Reading Values 03:28 Writing Values, Method 1: Quantum Tunneling 07:07 Writing Values, Method 2: Hot Electron Injection 08:32 Limited Write Cycles 10:01 Flash Memory Layout Options: NOR & NAND 11:44 Reading from NOR & NAND Flash Memory 13:33 Writing from NOR & NAND Flash Memory 16:35 Summary Sources: http://en.wikipedia.org/wiki/Flash_memory Pavan, P.; Bez, R.; Olivo, P.; Zanoni, E.; , "Flash memory cells-an overview," Proceedings of the IEEE , vol.85, no.8, pp.1248-1271, Aug 1997 doi: 10.1109/5.622505 (http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=622505&tag=1) http://en.wikipedia.org/wiki/File:TunnelEffektKling1.png http://en.wikipedia.org/wiki/File:NMOS_NAND.png http://en.wikipedia.org/wiki/File:NMOS_NOR.png http://www.slipperybrick.com/wp-content/uploads/2007/08/sandisk-cruzer-8gb.jpg http://portal.lynxmobility.com/index.php?main_page=popup_image_additional&pID=43&pic=0&products_image_large_additional=images/Accesssories/microSD_2GB_01.jpg http://www.blogcdn.com/www.engadget.com/media/2007/05/pqi-256gb-ssd.jpg http://influentialaccess.files.wordpress.com/2012/04/tablets-and-smartphones.jpg http://electronicdesign.com/site-files/electronicdesign.com/files/archive/electronicdesign.com/files/29/16383/figure_02.gif